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 TDA7560
4 X 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD
1
Features
SUPERIOR OUTPUT POWER CAPABILITY: 4 x 50W/4 MAX. 4 x 45W/4 EIAJ 4 x 30W/4 @ 14.4V, 1KHz, 10% 4 x 80W/2 MAX. 4 x 77W/2 EIAJ 4 x 55W/2 @ 14.4V, 1KHz, 10% MULTIPOWER BCD TECHNOLOGY MOSFET OUTPUT POWER STAGE EXCELLENT 2 DRIVING CAPABILITY HI-FI CLASS DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: - INTERNALLY FIXED GAIN (26dB) - NO EXTERNAL COMPENSATION - NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER
Figure 1. Package
FLEXIWATT25
Table 1. Order Codes
Part Number TDA7560


Package FLEXIWATT25
OUTPUT DC OFFSET DETECTION LOAD DUMP VOLTAGE FORTUITOUS OPEN GND REVERSED BATTERY ESD
2
Description
1.1 Protections: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER
The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio. The fully complementary PChannel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances.
Figure 2. Block Diagram
Vcc1 Vcc2 470F ST-BY 100nF
MUTE
HSD
HSD/VOFFDET OUT1+ OUT1-
IN1 0.1F
PW-GND OUT2+
IN2 0.1F
OUT2PW-GND OUT3+
IN3 0.1F
OUT3PW-GND OUT4+
IN4 0.1F AC-GND 0.47F SVR 47F TAB S-GND
OUT4PW-GND
D94AU158C
February 2005
Rev. 2 1/11
TDA7560
Figure 3. Pin Connection (Top view)
1
25
OUT2-
OUT1-
OUT3-
P-GND2
P-GND1
AC-GND
P-GND3
OUT4-
P-GND4
OUT2+
OUT1+
S-GND
OUT3+
OUT4+
ST-BY
MUTE
IN1
IN2
IN4
TAB
VCC
IN3
SVR
VCC
D94AU159A
Table 2. Absolute Maximum Ratings
Symbol VCC VCC (DC) VCC (pk) IO Operating Supply Voltage DC Supply Voltage Peak Supply Voltage (for t = 50ms) Output Peak Current Repetitive (Duty Cycle 10% at f = 10Hz) Non repetitive (t = 100s) Power Dissipation Tcase = 70C Junction Temperature Storage Temperature Parameter Value 18 28 50 9 10 80 150 -55 to 150 Unit V V V A A W C C
Ptot Tj Tstg
THERMAL DATA
Symbol Rth j-case Parameter Thermal Resistance Junction to case Max. Value 1 Unit C/W
2/11
HSD
TDA7560
Table 3. Electrical Characteristcs (Refer to the test and application diagram, VS = 13.2V; RL = 4; Rg = 600; f = 1KHz; Tamb = 25C; unless otherwise specified).
Symbol Iq1 VOS dVOS Gv dGv Po Parameter Quiescent Current Output Offset Voltage During mute ON/OFF output offset voltage Voltage Gain Channel Gain Unbalance Output Power VS = 13.2V; THD = 10% VS = 13.2V; THD = 1% VS = 14.4V; THD = 10% VS = 14.4V; THD = 1% VS = 13.2V; THD = 10%, 2 VS = 13.2V; THD = 1%, 2 VS = 14.4V; THD = 10%, 2 VS = 14.4V; THD = 1%, 2 Po EIAJ Po max. THD eNo SVR fch Ri CT ISB Ipin5 VSB out VSB in AM VM out VM in VAM in EIAJ Output Power (*) Max. Output Power (*) Distortion Output Noise Supply Voltage Rejection High Cut-Off Frequency Input Impedance Cross Talk St-By Current Consumption St-by pin Current St-By Out Threshold Voltage St-By in Threshold Voltage Mute Attenuation Mute Out Threshold Voltage Mute In Threshold Voltage VS Automute Threshold f = 1KHz PO = 4W f = 10KHz PO = 4W VSt-By = 1.5V VSt-By = 1.5V to 3.5V (Amp: ON) (Amp: OFF) POref = 4W (Amp: Play) (Amp: Mute) (Amp: Mute) Att 80dB; POref = 4W (Amp: Play) Att < 0.1dB; PO = 0.5W VMUTE = 1.5V (Sourced Current) VMUTE = 3.5V HSD SECTION Vdropout Iprot Dropout Voltage Current Limits IO = 0.35A; VS = 9 to 16V 400 0.25 0.6 800 V mA 6.5 7 7.5 7 -5 12 8 18 18 80 3.5 1.5 90 3.5 1.5 VS = 13.7V; RL = 4 VS = 13.7V; RL = 2 VS = 14.4V; RL = 4 VS = 14.4V; RL = 2 Po = 4W Po = 15W; RL = 2 "A" Weighted Bw = 20Hz to 20KHz f = 100Hz; Vr = 1Vrms PO = 0.5W 50 100 80 60 23 16 28 20 42 32 50 40 41 72 25 19 30 23 45 34 55 43 45 77 50 80 0.006 0.015 35 50 70 300 100 70 60 120 20 10 0.05 0.07 50 70 25 26 RL = Play Mode Test Condition Min. 120 Typ. 200 Max. 320 60 60 27 1 Unit mA mV mV dB dB W W W W W W W W W W W W % % V V dB KHz K dB dB A A V V dB V V V V A A
Ipin23
Muting Pin Current
3/11
TDA7560
Table 3. Electrical Characteristcs (continued) (Refer to the test and application diagram, VS = 13.2V; RL = 4; Rg = 600; f = 1KHz; Tamb = 25C; unless otherwise specified).
Symbol VM_ON VM_OFF VOFF V25_T V25_F Parameter Mute Voltage for DC offset detection enabled Detected Differential Output Offset Pin 25 Voltage for Detection = TRUE Pin 25 Voltage for Detection = FALSE Test Condition Vstby = 5V Vstby = 5V; Vmute = 8V Vstby = 5V; Vmute = 8V VOFF > 4V Vstby = 5V; Vmute = 8V VOFF > 2V Min. 8 6 2 0 12 3 4 1.5 Typ. Max. Unit V V V V V OFFSET DETECTOR (Pin 26)
(*) Saturated square wave output.
Figure 4. Standard Test and Application Circuit
C8 0.1F C7 2200F Vcc1-2 R1 ST-BY 10K R2 MUTE 47K C1 IN1 0.1F IN2 C2 0.1F IN3 C3 0.1F IN4 C4 0.1F S-GND 14 13 16 C5 0.47F SVR C6 47F 10 25 HSD 1 TAB
D95AU335B
Vcc3-4 6 20 9 8 OUT1
4 C9 1F 22 C10 1F 11
7
5 2 3 OUT2
12
17 18 OUT3
15
19
21 24 23 OUT4
4/11
TDA7560
Figure 5. P.C.B. and component layout of the Figure 4. Components & Top Copper Layer
Bottom Copper Layer
5/11
TDA7560
Figure 6. Quiescent current vs. supply voltage.
240 220 200
0.1
Figure 9. Distortion vs. output Power
THD (%) 10
Vs= 14.4 V RL = 4 Ohm f = 10 KHz
Id (mA)
Vi = 0 RL = 4 Ohm
1
180 160 140
0.01
f = 1 KHz
8
10
12 Vs (V)
14
16
18
0.001 0.1
1 Po (W)
10
Figure 7. Output power vs. supply voltage.
80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 Po (W)
Po-max
Figure 10. Distortion vs. output power
10 THD (%)
Vs= 14.4 V
RL= 4 Ohm f= 1 KHz
1
THD= 10 %
RL = 2 Ohm f = 10 KHz
0.1
THD= 1 %
0.01
f = 1 KHz
8
9
10
11
12
13 14 Vs (V)
15
16
17
18
0.001 0.1
1
Po (W)
10
Figure 8. Output power vs. supply voltage.
130 120 110 100 90 80 70 60 50 40 30 20 10 Po (W)
Po-max
Figure 11. Distortion vs. frequency.
10 THD (%)
RL= 2 Ohm f= 1 KHz
1
THD= 10 %
Vs = 14.4 V RL = 4 Ohm Po = 4 W
0.1
THD= 1 %
0.01
8
9
10
11
12
13 14 Vs (V)
15
16
17
18
0.001 10
100
f (Hz)
1000
10000
6/11
TDA7560
Figure 12. Distortion vs. frequency.
10 THD (%)
Figure 15. Output attenuation vs. supply volt.
OUT ATTN (dB) 0
RL = 4 Ohm Po= 4 W ref.
1
Vs = 14.4 V RL = 2 Ohm Po = 8 W
-20 -40 -60 -80
0.1
0.01
0.001 10
100
f (Hz)
1000
10000
-100
5
6
7 Vs (V)
8
9
10
Figure 13. Crosstalk vs. frequency.
90 80 70 60 50 40 30 20 10 100 1000 10000
RL = 4 Ohm Po = 4 W Rg = 600 Ohm
Figure 16. Output noise vs. source resistance.
En (uV) 130 120 110 100 90 80 70 60 50 40 30 20
CROSSTALK (dB)
Vs= 14.4 V RL= 4 Ohm
22-22 KHz lin.
"A" wgtd
f (Hz)
1
10
100 1000 Rg (Ohm)
10000
100000
Figure 14. Supply voltage rejection vs. freq.
SVR (dB) 100 90 80 70 60 50 40 30 20 10 100 f (Hz) 1000 10000
Rg= 600 Ohm
Figure 17. Power dissipation & efficiency vs. output power (sine-wave operation)
Ptot (W) 90 80 70 60 50 40
Vs= 13.2 V RL= 4 x 4 Ohm f= 1 KHz SINE n
n (%)
90 80 70 60 50 40
Vripple= 1 Vrms
30 20 10 0 0 2 4 6
Ptot
30 20 10
0 8 10 12 14 16 18 20 22 24 26 28 30 Po (W)
7/11
TDA7560
Figure 18. Power dissipation vs. ouput power (Music/Speech Simulation)
30 25 20 15 10 5 Ptot (W)
Vs= 13.2 V RL= 4 x 4 Ohm GAUSSIAN NOISE CLIP START
Figure 19. Power dissipation vs. output power (Music/Speech Simulation)
60 55 50 45 40 35 30 25 20 15 10 5 Ptot (W)
Vs= 13.2 V RL= 4 x 2 Ohm GAUSSIAN NOISE
CLIP START
0
1
2
3 Po (W)
4
5
6
0
2
4 Po (W)
6
8
10
3
DC Offset Detector
The TDA7560 The TDA7560 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin and works with the amplifier umuted and with no signal on the inputs. The DC offset detection is signaled out on the HSD pin.
4
Application Hints (ref. to the circuit of fig. 4)
4.1 SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10F. 4.2 INPUT STAGE The TDA7560's inputs are ground-compatible and can stand very high input signals ( 8Vpk) without any performances degradation. If the standard value for the input capacitors (0.1F) is adopted, the low frequency cut-off will amount to 16 Hz. 4.3 STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. In absence of true CMOS ports or microprocessors, a direct connection to Vs of these two pins is admissible but a 470 kOhm equivalent resistance should present between the power supply and the muting and stand-by pins. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. 4.4 HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from fig. 18, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussian-distributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26W. Assuming Tamb = 70C and TCHIP = 150C as boundary conditions, the heatsink's thermal resistance should be approximately 2C/W. This would avoid any thermal shutdown occurence even after long-term and full-volume operation.
8/11
TDA7560
5
Package Information
Figure 20. Flexiwatt25 (vertical) Mechanical Data & Package Dimensions
mm TYP. 4.50 1.90 1.40 0.90 0.39 1.00 24.00 29.23 17.00 12.80 0.80 22.47 18.97 15.70 7.85 5 3.5 4.00 4.00 2.20 2 1.70 0.5 0.3 1.25 0.50 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031 0.884 0.747 0.618 0.309 0.197 0.138 0.157 0.157 0.086 0.079 0.067 0.02 0.12 0.049 0.019
DIM. A B C D E F (1) G G1 H (2) H1 H2 H3 L (2) L1 L2 (2) L3 L4 L5 M M1 N O R R1 R2 R3 R4 V V1 V2 V3
MIN. 4.45 1.80 0.75 0.37 0.80 23.75 28.90
MAX. 4.65 2.00 1.05 0.42 0.57 1.20 24.25 29.30
MIN. 0.175 0.070 0.029 0.014 0.031 0.935 1.139
MAX. 0.183 0.079 0.041 0.016 0.022 0.047 0.955 1.153
OUTLINE AND MECHANICAL DATA
22.07 18.57 15.50 7.70
22.87 19.37 15.90 7.95
0.869 0.731 0.610 0.303
0.904 0.762 0.626 0.313
3.70 3.60
4.30 4.40
0.145 0.142
0.169 0.173
5 (T p.) 3 (Typ.) 20 (Typ.) 45 (Typ.)
Flexiwatt25 (vertical)
(1): dam-bar protusion not included (2): molding protusion included
V C B V V3 H3 H H1 H2 R3 R4 V1 R2 R L L1 A
L4
O
L2
N
L3
V1
V2
R2 L5 G G1 F
FLEX25ME
R1 R1 R1 E M M1
D
Pin 1
7034862
9/11
TDA7560
6
Revision History
Table 4. Revision History
Date December 2001 February 2005 Revision 1 2 First Issue Improved value from 75 to 20A of the "ST_BY Current Consumption" parameter in the table 3 at the page 3. Description of Changes
10/11
TDA7560
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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